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Blocking Voltage 1700 V
Current Rating at 25°C 5.3 A
Rds(on) at 25°C 1000 mΩ
Package TO-263-7
Gate charge total 13 nC
Maximum junction temperature 150 °C

2nd Generation Z-FET™ 
1700V, 1000 mΩ, Silicon-Carbide MOSFET

SKU: C2M1000170J


See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features

  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Low parasitic inductance
  • Surface mount package with separate driver pin

Documents