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Wolfspeed Power Reference Design CRD-11DA12N-K 11 kW Motor Drive

20 kW High Efficiency Three-Phase Motor Drive Inverter

CRD-20DA12N-K
This reference design demonstrates how to use silicon carbide (SiC) MOSFETs to optimize the performance of a motor drive for auxiliary motors in electric vehicles, as well as Heating Ventilation and Air Conditioning (HVAC) and other similar applications. Utilizing SiC MOSFETs for these applications can increase system efficiency, reduce audible noise, and increase power density compared to silicon solutions. Although SiC MOSFETs are capable of achieving very high dv/dt switching transitions, the speed can also be easily controlled with the gate resistor to lower levels that are compatible with standard motor insulation while still achieving lower switching losses than silicon IGBTs.

The Design Accomplishes:

  • Peak efficiencies of 99.4%, full load efficiency of 98.9%
  • Wide operating voltage range
  • Closed-loop sensorless field oriented control

Specifications:

  • Input Voltage: 550 – 850 VDC
  • Switching Frequency: 16 – 32 kHz
  • Nominal RMS Output Voltage: 380 VL-L
  • Output Power: 20 kW
  • Short circuit protection
  • Bus derived auxiliary power supply
  • Open loop mode for static testing
  • Sensorless FOC for permanent magnet synchronous machine (PMSM)
  • CAN interface to PC based user interface
Applications
  • EV auxiliary motors
  • Heat pumps and air conditioning
  • Industrial motor drives
What's Included

Design Files for:

  • Main board
  • Controller Board
  • Aux Power Board
Request Separately
  • and GUI
  • Mechanical Specifications

Documents, Tools, & Support

Circuit block diagram of Wolfspeed Reference Design CRD-11DA12N-K
C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Learn More
C3M0040120K

1200 V, 40 mΩ, 32 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

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C2M1000170J

1700 V, 1000 mΩ, 5.3 A, TO-263-7 package, Gen 2 Discrete SiC MOSFET

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UCC5350MCDR

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Low-Side MOSFETs

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UCC25800-Q1

Ultra-low EMI transformer driver for isolated bias supplies

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UCC25800-Q1

Ultra-low EMI transformer driver for isolated bias supplies

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UCC21710QDWQ1

10A, High Voltage, Isolated Gate Driver With Short-Circuit Protection for High-Side MOSFETs

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ACS733KLATR

1 MHz Bandwidth, Galvanically Isolated Current Sensor IC

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32-bit MCU with 100-MHz, FPU, TMU, 256-kb Flash, CLA, InstaSPIN-FOC, CLB, PGAs, SDFM

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Knowledge Center

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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