- EV Fast Charging
- HVDC
- Enterprise server / telecom
- Industrial power supplies
![CRD30DD12N-K Product Shot](/static/37d32d9236d6e4ff879df6f6b7db8632/e08cd/crd30dd12n-k_product.png)
30 kW Interleaved LLC
CRD-30DD12N-K
The 30 kW 3 phase interleaved LLC DCDC converter (CRD-30DD12N-K) targets high-power-density, high-efficiency fast charger applications and features Wolfspeed’s discrete 1200V C3M Silicon Carbide MOSFETs (C3M0040120K) and 650V C6D Silicon Carbide Schottky Diodes (C6D20065D and C6D10065A). A 3-phase interleaved LLC topology is implemented to provide low input current ripple and high efficiency for EV high power fast charger. Discrete power devices offer cost effective and common package solutions. The reference design accommodates all different levels of EV charging with a wide output voltage range of 200V-1000V while maintaining a high power density of 6.5kW/L and higher than 98% peak efficiency. The adaptive control operates over a 130kHz-250kHz switching frequency range to maintain optimal control over all operating conditions. To achieve the listed output voltage range, input voltage must be actively adjusted between 650V and 900V. In the end application, this can be achieved using an active-front-end AC-DC converter. The secondary side of the converter is manually configurable for series or parallel operation depending on the output voltage range required.
The design accomplishes:
- Peak efficiencies over 98.3%
- Power density of 6.5kW/L
Parallel Output Configuration
- Output Voltage:
- 200V-250V DC, 66A max
- 250V-500V DC, 100A max, 30kW max
Series Output Configuration
- Output Voltage:
- 500V-1000V DC, 50A max, 30kW max
- Switching Frequency: 130-250kHz
- Extruded heatsink with forced air cooling
- CAN interface with PC based graphical user interface
Applications
What's Included
Reference Design Files for:
- Main board
- Controller Board
Request Separately
- Mechanical Specifications
Product Compatibility
Documents, Tools, & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
![CRD30DD12N-K Block Diagram](/static/a22ec5edde72c22397129e3fd69d2d64/19c73/crd30dd12n-k_block-diagram-v2.png)
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
![Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.](/static/ef64e2b8c803a08773d0883ca372727b/e08cd/wolfspeed_power_to-247-4_package_web.png)
C3M0040120K
Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode
DC-DC Converter
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
DC-DC Converter
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
Knowledge Center
Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice
See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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The design and geometry of power modules enable EMI modeling which empowers designers to predict and understand their system’s EMI behavior early in the design process.
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Unboxing the 25 kW Three-Phase Inverter Reference Design
Join Wolfspeed Applications Engineer Chris New as he unboxes the 25 kW three-phase inverter reference design and demonstrates how to get started evaluating power electronic system performance right out of the box.
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