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  • Discrete Silicon Carbide MOSFETs
  • E-Series Automotive-Qualified Silicon Carbide MOSFETs

E-Series Automotive-Qualified Silicon Carbide MOSFETs

650 V, 750 V and 1200 V E-Series Discrete Silicon Carbide Power MOSFETs
Wolfspeed's E-Series AEC-Q101 qualified discrete silicon carbide MOSFETs are designed to support all onboard automotive applications - from full BEVs (battery electric vehicle) to PHEVs (plug-in hybrid EV) and FCEVs (fuel cell EV). With PPAP capability and a legacy of proven durability + reliability, Wolfspeed's silicon carbide portfolio offers a wide range of different packages and die sizes to support the variety of different applications within the Automotive market. From hard-switching to resonant topologies, Wolfspeed offers 750 V, 1200 V, and 1700 V products to enable improved power conversion system performance across efficiency, density, part count, and reliability metrics. To support your journey of designing with silicon carbide MOSFETs, Wolfspeed offers applications support through the Power Applications Forum, as well as evaluation kits and reference designs to make testing in your lab easy.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

E-Series Automotive-Qualified Silicon Carbide MOSFETs

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E-Series Automotive-Qualified Silicon Carbide MOSFETs - Filter By

E-Series Automotive-Qualified Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
Technology
E4M0015075J2
Active
750 V
15 mΩ
156 A
175 °C
TO-263-7 XL
Automotive
E4M
E4M0015075K1
Active
750 V
15 mΩ
128 A
175 °C
TO-247-4 LP
Automotive
E4M
E4M0025075J2
Active
750 V
25 mΩ
84 A
175 °C
TO-263-7 XL
Automotive
E4M
E4M0025075K1
Active
750 V
25 mΩ
80 A
175 °C
TO-247-4 LP
Automotive
E4M
E4M0045075J2
Active
750 V
45 mΩ
46 A
175 °C
TO-263-7 XL
Automotive
E4M
E4M0045075K1
Active
750 V
45 mΩ
42 A
175 °C
TO-247-4 LP
Automotive
E4M
E4M0060075J2
Active
750 V
60 mΩ
36 A
175 °C
TO-263-7 XL
Automotive
E4M
E4M0060075K1
Active
750 V
60 mΩ
35 A
175 °C
TO-247-4 LP
Automotive
E4M
E3M0016120K
Active
1200 V
16 mΩ
125 A
175 °C
TO-247-4
Automotive
E3M
E3M0021120K
Active
1200 V
21 mΩ
104 A
175 °C
TO-247-4
Automotive
E3M
E3M0021120J2
Active
1200 V
21 mΩ
114 A
175 °C
TO-263-7 XL
Automotive
E3M
E3M0032120K
Active
1200 V
32 mΩ
67 A
175 °C
TO-247-4
Automotive
E3M
E3M0032120J2
Active
1200 V
32 mΩ
74 A
175 °C
TO-263-7 XL
Automotive
E3M
E3M0040120K
Active
1200 V
40 mΩ
57 A
175 °C
TO-247-4
Automotive
E3M
E3M0040120J2
Active
1200 V
40 mΩ
63 A
175 °C
TO-263-7 XL
Automotive
E3M
E3M0075120K
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-4
Automotive
E3M
E3M0075120D
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-3
Automotive
E3M
E3M0075120J2
Active
1200 V
75 mΩ
34 A
175 °C
TO-263-7 XL
Automotive
E3M
E3M0160120K
Active
1200 V
160 mΩ
17 A
175 °C
TO-247-4
Automotive
E3M
E3M0160120J2
Active
1200 V
160 mΩ
18 A
175 °C
TO-263-7 XL
Automotive
E3M
E3M0900170D
New
Active
1700 V
900 mΩ
4.4 A
175 °C
TO-247-3
Automotive
E3M
E3M0900170J
New
Active
1700 V
900 mΩ
4.4 A
175 °C
TO-263-7
Automotive
E3M
E3M0016120U2
Coming
Soon
Coming Soon
1200 V
16 mΩ
125 A
175 °C
TSC (U2)
Automotive
E3M
E3M0021120U2
Coming
Soon
Coming Soon
1200 V
21 mΩ
114 A
175 °C
TSC (U2)
Automotive
E3M
E3M0032120U2
Coming
Soon
Coming Soon
1200 V
32 mΩ
74 A
175 °C
TSC (U2)
Automotive
E3M
E3M0040120U2
Coming
Soon
Coming Soon
1200 V
40 mΩ
63 A
175 °C
TSC (U2)
Automotive
E3M
E3M0075120U2
Coming
Soon
Coming Soon
1200 V
75 mΩ
34 A
175 °C
TSC (U2)
Automotive
E3M
E3M0160120U2
Coming
Soon
Coming Soon
1200 V
160 mΩ
18 A
175 °C
TSC (U2)
Automotive
E3M
E3M0045065K
Last Time Buy
650 V
45 mΩ
46 A
175 °C
TO-247-4
Automotive
E3M
E3M0060065D
Last Time Buy
650 V
60 mΩ
37 A
175 °C
TO-247-3
Automotive
E3M
E3M0060065K
Last Time Buy
650 V
60 mΩ
37 A
175 °C
TO-247-4
Automotive
E3M
E3M0120090J
Last Time Buy
900 V
120 mΩ
22 A
150 °C
TO-263-7
Automotive
E3M
E3M0160120D
Last Time Buy
1200 V
160 mΩ
17 A
175 °C
TO-247-3
Automotive
E3M
E4M0013120K
NRND
1200 V
13 mΩ
153 A
175 °C
TO-247-4
Automotive
E4M

End of Section

Product Details

Features

  • Automotive Qualified (AEC-Q101) and PPAP capable
  • Top side cooling (TSC) for improved thermal performance
  • Surface mount package for automated assembly
  • Kelvin source pin for fast gate control

Benefits

  • High power density
  • Low assembly cost compared to through-hole devices
  • Rugged body diode

Typical Applications

  • OBC & DC/DC converters
  • Fuel cell DC/DC converters
  • Fuel cell inverters
  • Onboard HVAC / Battery Thermal Management
  • Powertrain inverters
  • Auxiliary power supplies

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS ModelsSpeedVal Kit™ Modular Evaluation Platform22 kW Bi-Directional CLLC Utilizing IMS Board6.6 kW Bi-Directional EV On-Board Charger

Technical Support

Power Applications Forum

Featured Application Notes

PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-08367: EV Charging Power Topologies Design Guidebook

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Data Sheets
E3M0016120K
03/2025
Data Sheets
E3M0040120K
03/2025
Data Sheets
E3M0032120K
03/2025
Data Sheets
E3M0075120J2
03/2025
Data Sheets
E3M0032120J2
03/2025
Data Sheets
E3M0075120D
03/2025
Data Sheets
E3M0075120K
03/2025
Data Sheets
E3M0045065K
01/2025
Data Sheets
E3M0060065K
01/2025
Data Sheets
E3M0060065D
01/2025
Data Sheets
E3M0160120D
01/2025
Data Sheets
E3M0160120K
01/2025
Data Sheets
E3M0120090J
01/2025
Data Sheets
E4M0060075K1
01/2025
Data Sheets
E4M0045075K1
01/2025
Data Sheets
E4M0025075K1
01/2025
Data Sheets
E4M0015075K1
01/2025
Data Sheets
E4M0060075J2
01/2025
Data Sheets
E4M0045075J2
01/2025
Data Sheets
E4M0025075J2
01/2025
Data Sheets
E4M0015075J2
01/2025
Data Sheets
E3M0021120K
01/2025
Data Sheets
E4M0013120K
01/2025
Data Sheets
E3M0160120J2
01/2025
Data Sheets
E3M0040120J2
01/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Partnering for Maximum Impact: An Interview with Paul Wheeler

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Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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