SpeedVal™ Kit Modular Evaluation Platform Power Daughter Cards – TO-247-3
Silicon Carbide MOSFETs in a TO-247-3 package can provide a highly compatible footprint for existing designs while supporting high power levels and flexibility in system design and heatsinking. The SpeedVal Kit TO-247-3 power daughter cards feature two MOSFETs arranged in a half-bridge configuration. The unique card edge interface provides low inductance while greatly simplifying the process of swapping out components, enabling high-quality measurements and quick comparisons between different devices. Power Daughter Cards are optimized for making accurate high-bandwidth current and voltage measurements.
An on-board current shunt can be optimized for highly accurate dynamic switching tests, or high-power thermal testing. The coaxial MMCX connectors for VGS and IDS and BNC connectors for VDS provide noise-free measurements to improve accuracy and simplify gate drive optimization.
The power daughter cards include a pre-assembled heatsink which aligns with a fan on the motherboard to enable high-power testing.

Front and side view of the TO-247-3 package
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Product SKU | Buy Online | User Guide | Design Files | Status | Upper Devices | Lower Devices | Blocking Voltage | RDS(ON) at 25°C | Package | View Product |
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Active | 1200 V | 75 mΩ | TO-247-3 | ![]() |


