25 kW高效率高功率密度双向T-型逆变器

CRD-25BDA6512N-K

25 kW双向T-型逆变器展示了Wolfspeed 650 V和1200 V碳化硅 (SiC) MOSFET 在光伏逆变器、不间断电源 (UPS)、电动汽车快速充电桩、高压直流 (HVDC) 应用、人工智能/数据中心大功率 PSU 及储能系统等高功率系统中的性能表现。该参考设计提供了一套完整的评估工具，可作为新型碳化硅设计的开发起点，其具备两种工作模式：逆变器模式与功率因数校正 (PFC) 模式。

该设计实现：

逆变器模式与 PFC 模式峰值效率均>99%
功率密度>6 kW/L

逆变器模式规格：

直流输入电压：800 V DC
最大电流：36 A
交流输出电压：380 – 480 V_line-line 50 / 60 Hz
最大功率：25 kW
开关频率：60 kHz

PFC模式规格：

三相输入电压：380 – 480 V_line-line 50 / 60 Hz
最大电流：36 A
直流输出电压：650 V – 900 V
最大功率：25 kW
开关频率：60 kHz

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

应用

光伏逆变器
不间断电源(UPS)
储能系统
电动汽车快速充电
工业电源

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Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0032120K

1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0025065K

650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

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