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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Wolfspeed's family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed's new 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.

Parametric Data

1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
1200 V
26 mΩ
90 A
136 nC
110 pF
590 nC
56 ns
175 °C
Gen 4
1200 V
42 mΩ
55 A
93 nC
85 pF
496 nC
24 ns
175 °C
Gen 4

Product Details

  • 4th Generation SiC MOSFET
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance
  • Soft body diode with low reverse recovery
  • Low conduction losses over temperature
  • Improves system efficiency with lower switching loss
  • Reduces system size, weight, and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Renewable energy inverters
  • High voltage DC/DC converters
  • Off-board chargers
  • Motor drives

Tools & Support


Document Type
Document Name
Last Updated
Application Notes
Application Notes
Application Notes
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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