Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems, industrial power supplies, and renewable energy systems.
The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions, Wolfspeed silicon carbide power device technology enables increased system power density, higher switching frequencies, reduced component-count, and reduced size of components like inductors, capacitors, filters &, transformers.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0120100J | 1000 V | 120 mΩ | Gen 3 | 22 A | 21.5 nC | 40 pF | 83 W | 150 °C | TO-263-7 | Yes | Industrial |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| User Guide | |
| Test Report | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
