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C3M0120100J

C3M0120100J
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1000 V, 120 mΩ, 22 A, TO-263-7 package, Gen 3 Discrete SiC MOSFET
Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems, industrial power supplies, and renewable energy systems. The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions, Wolfspeed silicon carbide power device technology enables increased system power density, higher switching frequencies, reduced component-count, and reduced size of components like inductors, capacitors, filters &, transformers.

Products

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1000 V Discrete Silicon Carbide MOSFETs

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1000 V Discrete Silicon Carbide MOSFETs

Product SKU
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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120100J
1000 V
120 mΩ
22 A
150 °C
TO-263-7
Yes
Industrial

Product Details

Features
  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing
Benefits
  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies
Applications
  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging

Documents, Tools & Support

Display All SKUs in Product Family (4)

Documents

Document Type
Document Name
Last Updated
Application Notes
09/2022
Application Notes
10/2022
Application Notes
01/2023
Application Notes
11/2023
Application Notes
11/2021
Application Notes
01/2024
Application Notes
01/2024
Application Notes
05/2023
Test Report
03/2022
Data Sheets
01/2024
Product Catalog
02/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

Knowledge Center

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Design Resources

Low Load Efficiency Simulations with Silicon Carbide

Power electronics devices are almost never working at maximum of their capabilities because of safety, reliability but even application mission profile. Our experts will demonstrate how Wolfspeed's free SpeedFit simulation tool is the perfect starting point before moving to accurate LTSpice simulations.
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