Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems.
The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0120100J | 1000 V | 120 mΩ | Gen 3 | 22 A | 21.5 nC | 40 pF | 83 W | 150 °C | TO-263-7 | Yes | Industrial |
Document Type | Document Name |
|---|---|
| User Guide | |
| Application Notes | |
| Application Notes | |
| Test Report | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
| Sales Terms |
