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1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

1200V Bare Die SiC MOSFETs - Gen 3
Wolfspeed's Gen 3 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications

Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS); motor drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.

Based on the latest 3rd generation technology; Wolfspeed’s 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior.

Pairing Wolfspeed’s 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size; weight; design complexity; and cost in most high-power applications.

A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-1200-0013A
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Yes
CPM3-1200-0075A
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes
CPM3-1200-0016A
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Yes
CPM3-1200-0032A
1200 V
32 mΩ
63 A
118 nC
130 pF
231 nC
58 ns
175 °C
Gen 3
Yes
CPM3-1200-0021A
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Yes
Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems
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