Skip to Main Content
浏览产品 (中文)

1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

1200V Bare Die SiC MOSFETs - Gen 3
Wolfspeed's Gen 3 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications

Wolfspeed offers a family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as Uninterruptible Power Supplies (UPS); motor drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.

Based on the latest 3rd generation technology; Wolfspeed’s 1200 V Silicon Carbide MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior.

Pairing Wolfspeed’s 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size; weight; design complexity; and cost in most high-power applications.

A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

1200 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Recommended For New Design?
1200 V
160 mΩ
17 A
38 nC
39 pF
194 nC
34 ns
150 °C
Gen 3
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
1200 V
32 mΩ
63 A
118 nC
130 pF
478 nC
27 ns
175 °C
Gen 3
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3

Product Details

  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems

Documents, Tools & Support


Apply Filters
Document Type
Document Name
Design Files
Application Notes
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Articles and Papers
New Innovations Revolutionize Power Conversion for EVs
Sales Terms
Sales Terms
Technical Support
Power Applications Forum
Sales Support
Stay Informed

Knowledge Center

View All
Silicon Carbide

In The Studio | Powering the Silicon Carbide Ecosystem

A global provider of technology products, services and solutions, Arrow Electronics is uniquely positioned to support customers in the transition to Silicon Carbide. Join Aiden Mitchell, Sr. VP of Global Marketing & Engineering, and Guy Moxey as they explore the rapidly growing global race toward electrifying everything.
View Now 
 In The Studio


Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.