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1200V Bare Die SiC MOSFETs – Gen 3

1200V Bare Die SiC MOSFETs – Gen 3

1200V Bare Die SiC MOSFETs - Gen 3
Wolfspeed's Gen 3 family of 1200V silicon carbide MOSFETs are optimized for use in high power applications

Wolfspeed offers a family of 1200V silicon carbide MOSFETs that are optimized for use in high power applications such as UPS; motor drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.

Based on the latest 3rd generation technology; Wolfspeed’s 1200V SiC MOSFETs include a range of on-resistance and package options that enable designers to select the right part for their applications. The 1200V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior.

Pairing Wolfspeed’s 1200V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size; weight; design complexity; and cost in most high-power applications.

A range of top side and back side metallization options and die layouts provide flexibility to module designers in choice of assembly process and module layout.

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recover Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-1200-0013A
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Yes
CPM3-1200-0075A
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes
CPM3-1200-0016A
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Yes
CPM3-1200-0032A
1200 V
32 mΩ
63 A
118 nC
130 pF
231 nC
58 ns
175 °C
Gen 3
Yes
CPM3-1200-0021A
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Yes
Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recover Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-1200-0013A
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Yes
CPM3-1200-0075A
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes
CPM3-1200-0016A
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Yes
CPM3-1200-0032A
1200 V
32 mΩ
63 A
118 nC
130 pF
231 nC
58 ns
175 °C
Gen 3
Yes
CPM3-1200-0021A
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Yes
Features
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solid State Circuit Breakers
  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • UPS
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems
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Articles and Papers
New Innovations Revolutionize Power Conversion for EVs
Sales Terms
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Document Name
Application Notes
Application Notes
[Design only; boards no longer available]
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Data Sheets
Data Sheets
Data Sheets
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New Innovations Revolutionize Power Conversion for EVs
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