Features
- Stable RDS(ON) over temperature
- Available in package options with separate Kelvin source pin
- Extremely fast switching
- Reduction of heat-sink requirements
Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters, and more.
Based on 3rd generation technology, the wide variety of on-resistances and package options enables designers to select the right part for their applications.
Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
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C3M0021120K | 1200 V | 21 mΩ | Gen 3 | 100 A | 162 nC | 180 pF | 469 W | 175 °C | TO-247-4 | Yes | Industrial |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
User Guide | |
Test Report | |
Data Sheets | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Sheets & Flyers | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Sales Terms |