Features
- Stable RDS(ON) over temperature
- Available in package options with separate Kelvin source pin
- Extremely fast switching
- Reduction of heat-sink requirements
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
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C3M0075120J | 1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | Yes | Industrial |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
User Guide | |
Test Report | |
Data Sheets | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Sheets & Flyers | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Sales Terms |