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1200 V Discrete Silicon Carbide MOSFETs

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1200 V, 160 mΩ, 17 A, TO-247-3 package, Gen 3 Discrete SiC MOSFET

Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters, and more.

Based on 3rd generation technology, the wide variety of on-resistances and package options enables designers to select the right part for their applications.

Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.


1200 V Discrete Silicon Carbide MOSFETs

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1200 V Discrete Silicon Carbide MOSFETs

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Recommended For New Design?
1200 V
160 mΩ
Gen 3
17 A
38 nC
39 pF
97 W
150 °C

Product Details

  • Stable RDS(ON) over temperature
  • Available in package options with separate Kelvin source pin
  • Extremely fast switching
  • Reduction of heat-sink requirements


  • Easier to drive (+15V gate drive)
  • Improved system-level efficiency
  • Rugged body diode (no need for external diode)
  • Avalanche ruggedness
  • Solar inverters and energy storage
  • Onboard and fast DC EV-Charging Systems
  • Motor control and drives
  • Welding and inductive heating
  • Auxiliary power supplies
  • High-voltage DC/DC converters


Documents, Tools & Support


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Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
User Guide
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Product Catalog
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Sales Sheets & Flyers
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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