1700 V Discrete Silicon Carbide Schottky Diodes

1700 V Discrete Silicon Carbide Schottky Diodes

Product shot of two 1700V Discrete SiC Schottky Diodes
Wolfspeed 1700 V Discrete Silicon Carbide Schottky Diodes
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Wolfspeed 1700 V Silicon Carbide (SiC) Schottky Diodes enable smaller and more efficient power conversion systems. The 1700 V platform is optimized for high-frequency power electronics; including renewable-energy inverters; battery charging systems; and industrial power supply applications.

Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased system power density; higher switching frequencies; smaller designs; cooler components; reduced size of components like inductors; capacitors; filters & transformers; and overall cost benefits.

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Blocking Voltage
Current Rating
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Power Dissipation (PTOT)
Recommended For New Design?
1700 V
25 A
Gen 5
1.5 V
25 A
384 W
1700 V
10 A
Gen 5
1.7 V
10 A
185 W
1700 V
5 A
Gen 5
1.5 V
5 A
115 W
  • High blocking voltage with low RDS(on)
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Halogen-free; RoHS-compliant
  • Low parasitic inductance
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Surface mount package with separate kelvin source pin lowers source inductance and provides up to 30% lower switching losses
  • Optimized packing with wide creepage and clearance distance between drain and source (~8mm) providing extra electrical isolation suitable for high pollution environments
  • Auxiliary power supplies
  • Switch mode power supplies
  • Power inverters
  • 1500 V solar inverters
  • High voltage DC-DC converters
  • Motor drives
  • Pulsed power applications
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Knowledge Center

Fast Charging

Designing with Silicon Carbide in Unidirectional On-Board Chargers

Wolfspeed Silicon Carbide MOSFETs address many power design challenges by providing devices with low on-resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Read on to learn how these advantages are applied in higher-power unidirectional OBCs.
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