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1700 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1700 V, 5 A, TO-247-2 package, Gen 6 Discrete SiC Schottky Diode
Wolfspeed’s 1700 V Discrete Silicon Carbide (SiC) Schottky Diodes meet higher efficiency standards than standard silicon based solutions, while reaching higher frequencies and power densities. Silicon Carbide Schottky diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of Silicon Carbide products, these diodes are able to provide lower overall system costs in a variety of diverse applications.


1700 V Discrete Silicon Carbide Schottky Diodes

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1700 V Discrete Silicon Carbide Schottky Diodes

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Recommended For New Design?
1700 V
5 A
Gen 6
1.5 V
5 A
78 nC
110 W

Product Details

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior
  • Low Profile Package with Low Inductance
  • Enables High Switching Frequency Operation
  • Increased Power Density
  • Parallel Mode Operation Possible
  • Reduces System Size, Weight, Cooling Requirements
  • Industrial Switched Mode Power Supplies
  • Uninterruptible & AUX Power Supplies
  • Boost for PFC & DC-DC Stages
  • EV Chargers
  • Pulse Power

Documents, Tools & Support


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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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