Contact
中文
Home
62mm (BM2 & BM3) Silicon Carbide Half Bridge Power Modules

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Product shots of the BM2 & BM3 versions of the 62mm Half-Bridge SiC Power Modules.
BM2 & BM3 Half-Bridge Module for Switching & Conduction Optimized Applications
SpeedFit Design SimulatorLTspice & PLECS ModelsTechnical Support Forum

Wolfspeed’s 62mm power module platform provides the system benefits of Silicon Carbide (SiC); while maintaining the robust; industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed Silicon Carbide switching benefits; due to the low-inductance layout. The BM platform is a perfect fit for applications in the industrial test equipment; rail / traction; and EV charging infrastructure markets.

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
Recommended For New Design?
View Product
CAS120M12BM2
62mm
Half-Bridge
1200 V
120 A
13 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
CAS300M17BM2
62mm
Half-Bridge
1700 V
225 A
8 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
CAS300M12BM2
62mm
Half-Bridge
1200 V
300 A
4.2 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
WAB300M12BM3
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
WAB400M12BM3
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
CAB530M12BM3
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
175 °C
106 x 62 x 30 mm
Yes
Features
  • Industry-Leading; Reliable Silicon Carbide MOSFET Technology in Robust; Well-Established 62mm Form Factor
  • Strong Thermal Performance + Material Selections Optimized for Industrial & Harsh Environment Applications
  • Low-Inductance Design (10 – 15 nH) for Fast Switching with Low Power Losses
  • MOSFET Die and Selected Modules Qualified to HV-H3TRB
Benefits
  • Broad Portfolio of Current and Voltage Ratings Available to Fit Diverse Industrial Application Requirements
  • Fast Time to Market with Minimal Development Required for Transition from 62 mm IGBT Packages
  • Reduced Cooling Requirements & Overall System Cost
  • Optimized Internal Layout for Low Power Losses & Minimal Overshoot for Maximum Voltage Utilization
Applications
  • Railway & Traction
  • EV Charging Infrastructure
  • Industrial Automation & Testing
  • High Frequency Power Supplies
  • Renewable Energy Systems & Grid-Tied Inverters
  • Active Front Ends & AC Inverters
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Data Sheets
Articles and Papers
Product Catalog
Sales Sheets & Flyers
Sales Terms
Technical Support
Power Applications Forum
Sales Support

Knowledge Center

Power
|
Fast Charging

Designing with Silicon Carbide in Unidirectional On-Board Chargers

Wolfspeed Silicon Carbide MOSFETs address many power design challenges by providing devices with low on-resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Read on to learn how these advantages are applied in higher-power unidirectional OBCs.
Continue Reading 
 Technical Articles

3.6kW Bridgeless Totem-Pole PFC Reference Design Training

Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.
Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2022 Wolfspeed, Inc.