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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

Wolfspeed's Gen 3 family of 900 V Silicon Carbide (SiC) MOSFETs for high performance power electronics
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology; the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications; including renewable energy inverters; electric vehicle charging systems; and three-phase industrial power supplies; the new 900 V platform enables smaller; lighter; and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Products

900 V Bare Die Silicon Carbide MOSFETs – Gen 3

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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Status
CPM3-0900-0010A
900 V
10 mΩ
194 A
210 nC
360 pF
1300 nC
36 ns
175 °C
Gen 3
Active
900 V
30 mΩ
66 A
87 nC
137 pF
545 nC
62 ns
175 °C
Gen 3
Active
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Active

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
Benefits
  • High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
  • Improves system efficiency with significantly lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Enables increased power density
  • Easy to parallel and compatible with standard gate drive designs
Applications
  • Solar inverters
  • Motor Drives
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Solid State Circuit Breakers
  • Off Board Chargers

Documents, Tools, & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

Knowledge Center

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos

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