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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

900 V Bare Die Silicon Carbide MOSFETs – Gen 3

900V Bare Die SiC MOSFETs - Gen 3
Wolfspeed's Gen 3 family of 900 V Silicon Carbide MOSFETs for high performance power electronics

Wolfspeed extends its leadership in Silicon Carbide (SiC) technology by introducing the most advanced SiC MOSFET technology; the industry’s first 900 V MOSFET platform. Optimized for high frequency power electronics applications; including renewable energy inverters; electric vehicle charging systems; and three-phase industrial power supplies; the new 900V platform enables smaller; lighter; and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0900-0010A
900 V
10 mΩ
194 A
210 nC
360 pF
1300 nC
36 ns
175 °C
Gen 3
Yes
CPM3-0900-0030A
900 V
30 mΩ
66 A
87 nC
137 pF
545 nC
62 ns
175 °C
Gen 3
Yes
CPM3-0900-0065A
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Yes
Features
  • Minimum of 900V Vbr across entire operating temperature range
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
Benefits
  • High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
  • Improves system efficiency with significantly lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Enables increased power density
  • Easy to parallel and compatible with standard gate drive designs
Applications
  • Solar inverters
  • Motor Drives
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Solid State Circuit Breakers
  • Off Board Chargers
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