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Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.

CPM3-0900-0030A

900 V, 30 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET

Parametric Data

Display All SKUs in Product Family (3)

900 V Bare Die Silicon Carbide MOSFETs – Gen 3

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900 V Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Qualification
CPM3-0900-0030A
Active
900 V
30 mΩ
66 A
87 nC
137 pF
545 nC
62 ns
175 °C
Gen 3
Industrial

Ordering & Compliance

CPM3-0900-0030A Ordering

Part NumberCPM3-0900-0030A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM3-0900-0030A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
REACh Declaration
California Prop 65Learn More
ECCNEAR99

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
Benefits
  • High-voltage; high-temperature; and high-humidity resistance enables true outdoor application for solar power conversion and off-board charging
  • Improves system efficiency with significantly lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Enables increased power density
  • Easy to parallel and compatible with standard gate drive designs
Typical Applications
  • Solar inverters
  • Motor Drives
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Solid State Circuit Breakers
  • Off Board Chargers

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos
Technical SupportPower Applications Forum

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