- Minimum of 900V Vbr across entire operating temperature range
- Low-impedance package with driver source
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm). To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.
RDS(ON) at 25°C
Gate Charge Total
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Recommended For New Design?
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs