Skip to Main Content
Wolfspeed Logo
Contact
  • English
  • 简体中文
  • 繁體中文
View Cart

CPMF-1200-S080B

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
1200 V, 80 mΩ, Gen 2 Bare Die SiC MOSFET
NOTE: Not recommended for new designs. 1200 V Bare Die SiC MOSFETs – Gen 2 is the recommended replacement.
Features 
  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive

Products

CPMF-1200-S080B

No filters selected, showing all 1 products

CPMF-1200-S080B

Product SKU
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Gate Charge Total
Maximum Junction Temperature
Package
Recommended For New Design?
CPMF-1200-S080B
1200 V
80 mΩ
Gen 2
91 nC
135 °C
Bare Die
No

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Data Sheets
Product Catalog
Sales Terms
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum
Buy OnlineFind a Distributor
Request SamplesVisit the Sample Center

Knowledge Center

View All
Power
|
Power Modules

Announcing the Newest Additions to the Wolfspeed WolfPACK™ Power Module Family

Read about the all new Wolfspeed WolfPACK™ power modules. These modules give designers scalability and efficiency along with maintaining the simplicity of the design.
Continue Reading  Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Instagram
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.