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CPMF-1200-S080B

Z-FET® Silicon Carbide MOSFET N-Channel Enhancement Mode
NOTE: Not recommended for new designs. 1200 V Bare Die SiC MOSFETs – Gen 2 is the recommended replacement.

Features 

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive

CPMF-1200-S080B

Product SKU
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Gate Charge Total
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
CPMF-1200-S080B
1200 V
80 mΩ
Gen 2
91 nC
135 °C
Bare Die
No

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