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650 V Bare Die Silicon Carbide MOSFETs – Gen 3

650 V Bare Die Silicon Carbide MOSFETs – Gen 3

Bare Die Silicon Carbide MOSFET product family
The industry's best in class on-state resistance and switching losses for maximum efficiency and power density
Technical Support Forum

Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0650-0015A
650 V
15 mΩ
120 A
190 nC
290 pF
510 nC
22 ns
175 °C
Gen 3
Yes
CPM3-0650-0045A
New
650 V
45 mΩ
49 A
63 nC
100 pF
247 nC
13 ns
175 °C
Gen 3
Yes
CPM3-0650-0060A
New
650 V
60 mΩ
37 A
46 nC
80 pF
151 nC
11 ns
175 °C
Gen 3
Yes
Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (Tj = 175°C)
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)
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