Features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra low reverse recovery
- High Temperature Operation (Tj = 175°C)
650 V Bare Die Silicon Carbide MOSFETs – Gen 3
The industry's best in class on-state resistance and switching losses for maximum efficiency and power density
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V Silicon Carbide MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V SiC MOSFET is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.
Parametric Data
650 V Bare Die Silicon Carbide MOSFETs – Gen 3
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650 V Bare Die Silicon Carbide MOSFETs – Gen 3
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 650 V | 15 mΩ | 120 A | 190 nC | 290 pF | 510 nC | 22 ns | 175 °C | Gen 3 | Industrial | |||
Active | 650 V | 45 mΩ | 49 A | 63 nC | 100 pF | 247 nC | 13 ns | 175 °C | Gen 3 | Industrial | |||
Active | 650 V | 60 mΩ | 37 A | 46 nC | 80 pF | 151 nC | 11 ns | 175 °C | Gen 3 | Industrial |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Enables high switching frequency operation
- Improves System Level Power Density
- Reduces System Size; Weight; and Cooling Requirements
Typical Applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
- Battery Management Systems (BMS)
Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Product Catalog | 05/2024 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
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