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900 V Discrete Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
900 V, 30 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance, which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.


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900 V Discrete Silicon Carbide MOSFETs

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900 V Discrete Silicon Carbide MOSFETs

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Blocking Voltage
RDS(ON) at 25°C
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Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Recommended For New Design?
900 V
30 mΩ
63 A
87 nC
131 pF
149 W
150 °C

Product Details

  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding

Documents, Tools & Support

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Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Test Report
Data Sheets
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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