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900 V Discrete Silicon Carbide MOSFETs

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C3M0030090K
900 V; 30 mΩ; 63 A; TO-247-4 package; Gen 3 Discrete Silicon Carbide (SiC) MOSFET

Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.

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900 V Discrete Silicon Carbide MOSFETs

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900 V Discrete Silicon Carbide MOSFETs

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Data Sheet
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Blocking Voltage
RDS(ON) at 25°C
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Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
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C3M0030090K
900 V
30 mΩ
Gen 3
63 A
87 nC
131 pF
149 W
150 °C
TO-247-4
Yes
Industrial

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Power Applications Forum
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Knowledge Center

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MOSFETs

Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs

Wolfspeed’s new 3300 V Bare Die MOSFET provides the system benefits of Silicon Carbide while maintaining expected reliability and ruggedness needed for today’s medium-voltage, high-power systems such as rail traction and industrial motor drives.
Continue Reading  Technical Articles

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