Features
- Minimum of 900V Vbr across entire operating temperature range
- Low-impedance package with driver source
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
900 V Discrete Silicon Carbide MOSFETs
C3M0030090K
900 V, 30 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm). To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance, which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Products
900 V Discrete Silicon Carbide MOSFETs
No filters selected, showing all 1 products
900 V Discrete Silicon Carbide MOSFETs
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0030090K | 900 V | 30 mΩ | Gen 3 | 63 A | 87 nC | 131 pF | 149 W | 150 °C | TO-247-4 | Yes | Industrial |
Product Details
Benefits
- Improves system efficiency with lower switching and conduction losses
- Enables high switching frequency operation
- Improves system level power density
- Reduces system size; weight; and cooling requirements
- Enables new hard switching topologies (Totem-Pole PFC)
Applications
- Motor Control
- EV Charging Systems
- Uninterruptible Power Supply (UPS)
- Battery management systems
- Fast EV-Charging Systems
- Onboard charging
- Drivetrain
- Welding
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Test Report | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
| Sales Terms |
Knowledge Center
Elevating Energy: How Silicon Carbide Transforms Solar and Energy Storage Systems
Now more than ever, engineers are being asked to design residential, commercial, and industrial solar energy systems that are compact, lightweight, and simple to set up. All of this can be achieved, including a 3% higher efficiency boost, with Wolfspeed Silicon Carbide. Join this webinar where our expert will demonstrate how Wolfspeed Silicon Carbide outperforms, increases power density, and lowers overall system costs.
Register Now Webinars
Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs
Wolfspeed’s new 3300 V Bare Die MOSFET provides the system benefits of Silicon Carbide while maintaining expected reliability and ruggedness needed for today’s medium-voltage, high-power systems such as rail traction and industrial motor drives.
Continue Reading Technical Articles
SpeedVal Kit™ Ecosystem Simplifies Silicon Carbide Part Evaluation and Cuts Design Time
The SpeedVal Kit platform utilizes a strong network of partners and products to affect an industry-wide journey toward Silicon Carbide adoption. Learn more about this ecosystem and the power design support available from Wolfspeed, Arrow and other industry leading suppliers.
Continue Reading Technical Articles