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C3M0120090J

C3M0120090J
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900 V, 120 mΩ, 22 A, TO-263-7 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance, which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Products

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900 V Discrete Silicon Carbide MOSFETs

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900 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120090J
900 V
120 mΩ
22 A
150 °C
TO-263-7
Yes
Industrial

Product Details

Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding

Documents, Tools & Support

Display All SKUs in Product Family (7)

Documents

Document Type
Document Name
Last Updated
Application Notes
09/2022
Application Notes
11/2021
Application Notes
10/2022
Application Notes
05/2023
Application Notes
01/2023
Application Notes
11/2023
Application Notes
01/2024
Application Notes
01/2024
Test Report
03/2022
Data Sheets
01/2024
Product Catalog
02/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

Knowledge Center

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Low Load Efficiency Simulations with Silicon Carbide

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