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HM Power Module Family

1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density
Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.

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HM Power Module Family

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HM Power Module Family

Product SKU
Buy Online
Data Sheet
CAD Model
Status
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
Qualification
CAB760M12HM3R
Active
HM
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAS480M12HM3
Active
HM
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAR600M12HN6
Active
HM
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAB760M12HM3
Active
HM
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAS380M17HM3
Active
HM
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAB500M17HM3
Active
HM
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAR600M17HN6
Active
HM
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Industrial
CAB650M17HM3
Active
HM
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Industrial

Product Details

Features
  • High Performance 62mm Footprint
  • Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
  • High Junction Temperature (175 °C) Operation
  • Configurations Available with both Second & Third Generation SiC MOSFETs
  • Lightweight AlSiC Baseplate
  • Silicon Nitride Insulator for Robust Thermal Cycling Capability
Benefits
  • Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
  • High-Reliability Material Selection enabling High-Temperature Operation
Typical Applications
  • Railway & Traction
  • Solar & Renewable Energy
  • EV Chargers
  • Industrial Automation & Testing
  • Medical Power Supplies
  • Motor Drives

Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
07/2024
Data Sheets
07/2024
Data Sheets
07/2024
Data Sheets
07/2024
Data Sheets
07/2024
Data Sheets
07/2024
Data Sheets
06/2024
Data Sheets
06/2024
User Guide
01/2024
User Guide
01/2024
Design Files
06/2020
Application Notes
03/2024
Application Notes
01/2024
Application Notes
11/2023
Application Notes
08/2023
Application Notes
01/2023
Application Notes
11/2021
Videos
11/2023
Product Catalog
05/2024
Sales Sheets & Flyers
01/2024
Sales Sheets & Flyers
01/2024
Sales Sheets & Flyers
01/2023
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos
Technical SupportPower Applications Forum
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