CAS300M12BM2

Module Size		106 x 62 x 30 mm
Configuration		Half-bridge
Blocking Voltage		1200 V
Current Rating		300 A
R_DS(ON) at 25°C		4.2 mΩ
Package		62mm
Maximum junction temperature		150 °C
Total Capacitive Charge (Q_C(typ))		3.2 µC (Tj = 150°C)
Switching Energy ESW		12 mJ (Tj = 150°C)

1200-V, 300-A, Silicon Carbide, 62-mm, Half-Bridge Module

SKU: CAS300M12BM2

Technical features

Document Name	Date Updated	Download
CAS300M12BM2 Version: A	Feb 28, 2018

Document Name	Date Updated	Download
Comparing Cree SiC MOSFET Module to Silicon IGBT-based Module	Oct 12, 2017

Document Name	Date Updated	Download
Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the Effects of Parasitic Inductance Version: A	Sep 3, 2015
Design Considerations for Designing with Cree SiC Modules Part 2. Techniques for Minimizing Parasitic Inductance	Sep 3, 2015

Document Name	Date Updated	Download
Power Line Card	Jun 26, 2019

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Jul 19, 2019

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