| Document Name | Date Updated | Download |
|---|---|---|
| Comparing Cree SiC MOSFET Module to Silicon IGBT-based Module | Oct 12, 2017 |
CAS300M12BM2
| Module Size | 106 x 62 x 30 mm | |
|---|---|---|
| Configuration | Half-bridge | |
| Blocking Voltage | 1200 V | |
| Current Rating | 300 A | |
| RDS(ON) at 25°C | 4.2 mΩ | |
| Package | 62mm | |
| Maximum junction temperature | 150 °C | |
| Total Capacitive Charge (QC(typ)) | 3.2 µC (Tj = 150°C) | |
| Switching Energy ESW | 12 mJ (Tj = 150°C) | |
1200-V, 300-A, Silicon Carbide, 62-mm, Half-Bridge Module
SKU: CAS300M12BM2
Technical features
- Ultra-low loss
- High-efficiency operation
- Zero reverse-recovery current from diode
- Zero turn-off tail current from MOSFET
- Normally-off, fail-safe device operation
- Ease of paralleling
- Copper baseplate and aluminum nitride insulator
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