Document Name | Date Updated | Download |
---|---|---|
Comparing Cree SiC MOSFET Module to Silicon IGBT-based Module | Oct 12, 2017 |
CAS300M12BM2

Module Size | 106 x 62 x 30 mm | |
---|---|---|
Configuration | Half-bridge | |
Blocking Voltage | 1200 V | |
Current Rating | 300 A | |
RDS(ON) at 25°C | 4.2 mΩ | |
Package | 62mm | |
Maximum junction temperature | 150 °C | |
Total Capacitive Charge (QC(typ)) | 3.2 µC (Tj = 150°C) | |
Switching Energy ESW | 12 mJ (Tj = 150°C) |
1200-V, 300-A, Silicon Carbide, 62-mm, Half-Bridge Module
SKU: CAS300M12BM2
Technical features
- Ultra-low loss
- High-efficiency operation
- Zero reverse-recovery current from diode
- Zero turn-off tail current from MOSFET
- Normally-off, fail-safe device operation
- Ease of paralleling
- Copper baseplate and aluminum nitride insulator
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