Features
- Minimum of 900V Vbr across entire operating temperature range
- Low-impedance package with driver source
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0120090D | 900 V | 120 mΩ | Gen 3 | 23 A | 17 nC | 40 pF | 97 W | 150 °C | TO-247-3 | Yes | Industrial |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Application Notes | |
Test Report | |
Data Sheets | |
Product Catalog | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Sales Terms |