Features
- Minimum of 900V Vbr across entire operating temperature range
- Low-impedance package with driver source
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Easy to parallel and simple to drive
900 V Discrete Silicon Carbide MOSFETs
C3M0120090D
900 V; 120 mΩ; 23 A; TO-247-3 package; Gen 3 Discrete Silicon Carbide (SiC) MOSFET
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm). To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.
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900 V Discrete Silicon Carbide MOSFETs
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900 V Discrete Silicon Carbide MOSFETs
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0120090D | 900 V | 120 mΩ | Gen 3 | 23 A | 17 nC | 40 pF | 97 W | 150 °C | TO-247-3 | Yes | Industrial |
Product Details
Benefits
- Improves system efficiency with lower switching and conduction losses
- Enables high switching frequency operation
- Improves system level power density
- Reduces system size; weight; and cooling requirements
- Enables new hard switching topologies (Totem-Pole PFC)
Applications
- Motor Control
- EV Charging Systems
- Uninterruptible Power Supply (UPS)
- Battery management systems
- Fast EV-Charging Systems
- Onboard charging
- Drivetrain
- Welding
Documents, Tools & Support
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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