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900V Discrete Silicon Carbide MOSFETs

900V Discrete Silicon Carbide MOSFETs

Wolfspeed 900V Discrete Silicon Carbide MOSFETs
Silicon Carbide solutions for fast switching power devices
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Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm).  To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.

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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120090D
900 V
120 mΩ
Gen 3
17 nC
40 pF
97 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090D
900 V
280 mΩ
Gen 3
9.5 nC
20 pF
54 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090J
900 V
280 mΩ
Gen 3
11.5 A
9.5 nC
20 pF
50 W
150 °C
TO-263-7
Yes
Industrial
C3M0120090J
900 V
120 mΩ
Gen 3
22 A
17 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090J
900 V
65 mΩ
Gen 3
35 A
30 nC
66 pF
113 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090D
900 V
65 mΩ
Gen 3
36 A
30 nC
66 pF
125 W
150 °C
TO-247-3
Yes
Industrial
C3M0030090K
900 V
30 mΩ
Gen 3
63 A
87 nC
131 pF
149 W
150 °C
TO-247-4
Yes
Industrial
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0120090D
900 V
120 mΩ
Gen 3
17 nC
40 pF
97 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090D
900 V
280 mΩ
Gen 3
9.5 nC
20 pF
54 W
150 °C
TO-247-3
Yes
Industrial
C3M0280090J
900 V
280 mΩ
Gen 3
11.5 A
9.5 nC
20 pF
50 W
150 °C
TO-263-7
Yes
Industrial
C3M0120090J
900 V
120 mΩ
Gen 3
22 A
17 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090J
900 V
65 mΩ
Gen 3
35 A
30 nC
66 pF
113 W
150 °C
TO-263-7
Yes
Industrial
C3M0065090D
900 V
65 mΩ
Gen 3
36 A
30 nC
66 pF
125 W
150 °C
TO-247-3
Yes
Industrial
C3M0030090K
900 V
30 mΩ
Gen 3
63 A
87 nC
131 pF
149 W
150 °C
TO-247-4
Yes
Industrial
Features
  • Minimum of 900V Vbr across entire operating temperature range
  • Low-impedance package with driver source
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Benefits
  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size; weight; and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Motor Control
  • EV Charging Systems
  • Uninterruptible Power Supply (UPS)
  • Battery management systems
  • Fast EV-Charging Systems
  • Onboard charging
  • Drivetrain
  • Welding
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[Design only; boards no longer available]
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Power Applications Forum
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Knowledge Center

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MOSFETs

Using Parasitic Modeling Software to Understand and Optimize Silicon Carbide Power PCB Layouts

Achieve high-performing designs using Wolfspeed Silicon Carbide (SiC) MOSFETs. This article will discuss how to use parasitic modeling software, in partnership with Keysight Technologies tools, to optimize Silicon Carbide Power PCB Layouts.
Continue Reading 
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