Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.
900 V Discrete Silicon Carbide MOSFETs
900 V Silicon Carbide (SiC) solutions for fast switching power devices
Note Not recommended for new designs.
Wolfspeed extends its leadership in Silicon Carbide (SiC) technology low inductance discrete packages with wide creepage and clearance distance between drain and source (~8mm). To take full advantage of the high-frequency capability of the latest MOSFET chips while providing extra electrical isolation suitable for high pollution environments. The separate Kelvin source pin reduces inductance; which reduces switching loses by as much as 30%. Designers can reduce component-count by moving from silicon-based; three-level topologies to simpler two-level topologies made possible by the improved switching performance.
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Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Tjmax | Package | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|
NRND | 900 V | 65 mΩ | 36 A | 150 °C | TO-247-3 | Industrial | |||||
NRND | 900 V | 65 mΩ | 35 A | 150 °C | TO-263-7 | Industrial |