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HM Power Module Family

1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density
Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.

Products

HM Power Module Family

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HM Power Module Family

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CAB760M12HM3R
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
Industrial

Product Details

Features
  • High Performance 62mm Footprint
  • Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
  • High Junction Temperature (175 °C) Operation
  • Configurations Available with both Second & Third Generation SiC MOSFETs
  • Lightweight AlSiC Baseplate
  • Silicon Nitride Insulator for Robust Thermal Cycling Capability
Benefits
  • Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
  • High-Reliability Material Selection enabling High-Temperature Operation
Applications
  • Railway & Traction
  • Solar & Renewable Energy
  • EV Chargers
  • Industrial Automation & Testing
  • Medical Power Supplies
  • Motor Drives

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
11/2021
Application Notes
01/2023
Application Notes
08/2023
Application Notes
03/2024
Application Notes
11/2023
Application Notes
01/2024
User Guide
01/2024
User Guide
01/2024
Design Files
06/2020
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Data Sheets
01/2024
Videos
11/2023
Product Catalog
02/2024
Sales Sheets & Flyers
01/2023
Sales Sheets & Flyers
01/2024
Sales Sheets & Flyers
01/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

Knowledge Center

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Design Resources

Low Load Efficiency Simulations with Silicon Carbide

Power electronics devices are almost never working at maximum of their capabilities because of safety, reliability but even application mission profile. Our experts will demonstrate how Wolfspeed's free SpeedFit simulation tool is the perfect starting point before moving to accurate LTSpice simulations.
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