HM Power Module Family

1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density

Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide (SiC) in power density sensitive applications; while maintaining the baseplate compatibility of a 62mm module. The HM platform’s Silicon Carbide optimized packaging enables 175°C continuous junction operation; with a high-reliability Silicon Nitride (Si₃N₄) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.

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Product SKU	Status	Package	Configuration	Blocking Voltage	Current Rating	R_DS(ON) at 25°C	Generation	T_jmax	Module Size	Qualification
CAB760M12HM3R	Active	HM	Half-Bridge Right GK for Paralleling	1200 V		1.33 mΩ	Gen 3 MOS	175 °C	110 x 65 x 12.2 mm	Industrial
CAS480M12HM3	Active	HM	Half-Bridge	1200 V	480 A	2.29 mΩ	Gen 3 MOS + Diodes	175 °C	110 x 65 x 12.2 mm	Industrial
CAR600M12HN6	Active	HM	Half-Bridge Rectifier	1200 V	600 A		Gen 6	175 °C	110 x 65 x 12.2 mm	Industrial
CAB760M12HM3	Active	HM	Half-Bridge	1200 V	760 A	1.33 mΩ	Gen 3 MOS	175 °C	110 x 65 x 12.2 mm	Industrial
CLB800M12HM3P New	Active	HM	Common-Source	1200 V	800 A	1.3 mΩ	Gen 3+	175 °C	110 x 65 x 12.2 mm	Industrial
CLB800M12HM3PT New	Active	HM	Common-Source	1200 V	800 A	1.3 mΩ	Gen 3+	175 °C	110 x 65 x 12.2 mm	Industrial
CAS380M17HM3	Active	HM	Half-Bridge	1700 V	380 A	3.3 mΩ	Gen 3 MOS + Diodes	175 °C	110 x 65 x 12.2 mm	Industrial
CAB500M17HM3	Active	HM	Half-Bridge	1700 V	500 A	2.5 mΩ	Gen 3 MOS	175 °C	110 x 65 x 12.2 mm	Industrial
CAR600M17HN6	Active	HM	Half-Bridge Rectifier	1700 V	600 A		Gen 6	175 °C	110 x 65 x 12.2 mm	Industrial
CAB650M17HM3	Active	HM	Half-Bridge	1700 V	650 A	1.67 mΩ	Gen 3 MOS	175 °C	110 x 65 x 12.2 mm	Industrial
CLB650M17HM3 New	Active	HM	Common-Source	1700 V	650 A	1.42 mΩ	Gen 3	175 °C	110 x 65 x 12.2 mm	Industrial
CLB650M17HM3T New	Active	HM	Common-Source	1700 V	650 A	1.42 mΩ	Gen 3	175 °C	110 x 65 x 12.2 mm	Industrial

Product Details

Features

High Performance 62mm Footprint
Low Inductance (4.9 nH) Design to Enable High Speed Switching & High Efficiency with Reduced Losses
High Junction Temperature (175 °C) Operation
Configurations Available with both Second & Third Generation SiC MOSFETs
Lightweight AlSiC Baseplate
Silicon Nitride Insulator for Robust Thermal Cycling Capability

Benefits

Lightweight; Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
Increased System Efficiency; due to Low Switching & Conduction Losses of Silicon Carbide
High-Reliability Material Selection enabling High-Temperature Operation

Typical Applications

Railway & Traction
Solar & Renewable Energy
EV Chargers
Industrial Automation & Testing
Medical Power Supplies
Motor Drives

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Documents

32 Documents Available

Document Type	Document Name	Last Updated
Data Sheets	CLB800M12HM3P New	05/2025
Data Sheets	CLB650M17HM3 New	05/2025
Data Sheets	CAB760M12HM3R	07/2024
Data Sheets	CAB500M17HM3	07/2024
Data Sheets	CAB650M17HM3	07/2024
Data Sheets	CAS380M17HM3	07/2024
Data Sheets	CAB760M12HM3	07/2024
Data Sheets	CAS480M12HM3	07/2024
Data Sheets	CAR600M12HN6	06/2024
Data Sheets	CAR600M17HN6	06/2024
User Guide	PRD-08333: Wolfspeed Module CIL Evaluation Kits User Guide	03/2025
User Guide	PRD-07933: Power Module Thermal Interface Material Application User Guide	03/2025
User Guide	PRD-09035: Wolfspeed Power Module RC Thermal Models User Guide	01/2025
Design Files		06/2020
Application Notes	PRD-09301: Gate Driver Design for SiC Power Modules New	05/2025
Application Notes	PRD-07845: Power Module Baseplate Capacitance and Electromagnetic Compatibility	03/2025
Application Notes	PRD-08911: Considerations for Current Balancing in Paralleled SiC Power Modules	01/2025
Application Notes	PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies	01/2025
Application Notes	PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters	01/2025
Application Notes	PRD-08710: Measuring Stray Inductance in Power Electronics Systems	07/2024
Application Notes	PRD-08734: Understanding and Simulating Parasitic Inductance in Silicon Carbide Systems	07/2024
Application Notes	PRD-08376: Thermal Characterization Methods and Applications	01/2024
Application Notes	PRD-08296: SiC MOSFET Short Circuit Events	11/2023
Application Notes	PRD-06379: Environmental Considerations for Power Electronics Systems	08/2023
Application Notes	PRD-06933: Capacitance Ratio and Parasitic Turn-on	01/2023

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HM Power Module Family

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