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XM3 Half Bridge Power Module Family

XM3 Half-Bridge Power Module Family

Product shot of Wolfspeed's XM3 Half-bridge SiC power module package
1200 V Half-Bridge Power Module Designed for Silicon Carbide to Enable High Power Density
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Wolfspeed continues to lead in Silicon Carbide with our first automotive qualified 1200 V, 450 A, all-Silicon Carbide conduction-optimized, half-bridge XM3 power module. Enabling high efficiency and high power density in the most demanding automotive applications.

Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment.

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CAB400M12XM3
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
CAB425M12XM3
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
CAB450M12XM3
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
EAB450M12XM3
New
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
Features
  • High Temperature (175 °C) Operation
  • Low Inductance (6.7 nH) Design
  • Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
  • Integrated Temperature Sensor and Kelvin-Drain Connection
  • Silicon Nitride Ceramic Substrate and Copper Baseplate
Benefits
  • Power Dense Footprint Enables Compact Systems
  • Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance
  • Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses
  • SiN AMB Substrate and High Reliability Solders Enhance Lifetime
  • Direct Gate Driver Mating Enables Compact Design with Low Inductance
Applications
  • Traction Drives
  • Motor Drives
  • UPS
  • EV Chargers
  • Industrial Automation & Testing
  • Power Supplies
  • More Electric Aircraft and eVTOL
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Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.

Introducing EAB450M12XM3: Wolfspeed’s first Automotive-Qualified Silicon Carbide Power Module

Wolfspeed’s auto qualified EAB450M12XM3 power module maximizes the benefits of Silicon Carbide. At half the weight and volume of a standard 62 mm module, the XM3 enables high efficiency and high power density in the most demanding automotive applications.
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