- High Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
- Integrated Temperature Sensor and Kelvin-Drain Connection
- Silicon Nitride Ceramic Substrate and Copper Baseplate
XM3 Half-Bridge Power Module Family

Wolfspeed continues to lead in Silicon Carbide with our first automotive qualified 1200 V, 450 A, all-Silicon Carbide conduction-optimized, half-bridge XM3 power module. Enabling high efficiency and high power density in the most demanding automotive applications.
Wolfspeed has developed 1200 V and 1700 V XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment.
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XM3 Half-Bridge Power Module Family
XM3 Half-Bridge Power Module Family
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB320M17XM3 New | XM3 | Half-Bridge | 1700 V | 320 A | 4 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | ||||
CAB400M12XM3 | XM3 | Half-Bridge | 1200 V | 400 A | 4 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | ||||
CAB425M12XM3 | XM3 | Half-Bridge | 1200 V | 425 A | 3.2 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | ||||
CAB450M12XM3 | XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | ||||
EAB450M12XM3 New | XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Automotive |
Product Details
- Power Dense Footprint Enables Compact Systems
- Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance
- Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses
- SiN AMB Substrate and High Reliability Solders Enhance Lifetime
- Direct Gate Driver Mating Enables Compact Design with Low Inductance
- Traction Drives
- Motor Drives
- UPS
- EV Chargers
- Industrial Automation & Testing
- Power Supplies
- More Electric Aircraft and eVTOL
- Energy Generation/Smart Grids/Smart Energy
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