全面的产品组合可实现体积更小、效率更高的工业低电压电机驱动器
通过 Wolfspeed 全面的 650 V、新款 750 V 和 1200 V MOSFET 产品组合,工程师在工业低电压电机驱动器中使用碳化硅进行设计时拥有更高灵活性,可帮助其根据特定需求进行定制设计。
能从多种封装类型中进行选择,构建可将系统整体效率提高 2.6% 或以上的定制解决方案,并满足严格的 IE4 和 IE5 效率标准。与高速软特性 IGBT 相比,Wolfspeed 的 MOSFET 的导通损耗更低,开关损耗大幅下降,再加上经过优化的整体系统以及更快的转速和更精确的控制,可显著提高驱动器的性能,同时降低可闻噪声。
Wolfspeed的六管集成 全桥功率模块 WolfPACK™ 可进一步简化系统设计,为当前的硅 IGBT 驱动器提供完整的现成解决方案。要迎接重新设计系统的挑战吗?在散热器尺寸显著缩小(可缩小多达 77%)的情况下,WolfPACK 可在更大负载下运行,从而实现更小型、更轻量的全嵌入式工业低电压电机驱动器。
请浏览以下特色内容,了解有关 Wolfspeed 碳化硅器件如何显著改进工业低电压电机驱动器系统的更多信息。
特色内容
行业领先的设计支持工具,用于工业电机驱动器设计
Wolfspeed 提供行业领先的设计支持,包括 SpeedFit™ 设计仿真工具、工业电机驱动器应用参考设计以及新发布的三相 SpeedVal™ 套件模块化评估平台,可在 2-30 kV 工业电机驱动器、热泵和空调应用场景实际工况下快速测试碳化硅器件。浏览我们的特色设计资源或了解所有设计支持工具。
针对工业低电压电机驱动器的特色设计支持
用于工业低电压电机驱动的 Wolfspeed 碳化硅器件
Wolfspeed 产品凝聚多年丰富经验和专精技术,质量与创新的完美结合将帮助您的设计更上一层楼。
分立碳化硅 MOSFET
分立碳化硅 MOSFET
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分立碳化硅 MOSFET
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0060075K1 New | 750 V | 60 mΩ | Gen 3 MOS | 35 A | 52 nC | 69 pF | 126 W | 175 °C | TO-247-4 LP | Industrial | ||||
C3M0025075K1 New | 750 V | 25 mΩ | Gen 3 MOS | 80 A | 119 nC | 158 pF | 262 W | 175 °C | TO-247-4 LP | Industrial | ||||
C3M0045075K1 New | 750 V | 45 mΩ | Gen 3 MOS | 42 A | 65 nC | 95 pF | 139 W | 175 °C | TO-247-4 LP | Industrial | ||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 XL | Industrial | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | Industrial | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 175 °C | TO-263-7 XL | Industrial | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 | Industrial | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 XL | Industrial | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | Industrial | |||||
1200 V | 75 mΩ | Gen 3 | 32 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-247-4 | Industrial |
分立碳化硅肖特基二极管
分立碳化硅肖特基二极管
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分立碳化硅肖特基二极管
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 30 A | Gen 6 | 1.35 V | 88 A | 98 nC | 227 W | TO-247-2 | Industrial | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 63 nC | 174 W | TO-247-2 | Industrial | |||||
650 V | 50 A | Gen 6 | 1.3 V | 50 A | 158 nC | 349 W | TO-247-2 | Industrial | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | Industrial | |||||
650 V | 16 A | Gen 3 | 1.5 V | 16 A | 44 nC | 150 W | TO-220-2 | Industrial | |||||
1200 V | 10 A | Gen 4 | 1.5 V | 10 A | 52 nC per leg | 170 W | TO-252-2 | Industrial |
碳化硅功率模块
碳化硅功率模块
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碳化硅功率模块
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial + HV-H3TRB | ||||||
62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial + HV-H3TRB | ||||||
62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial + HV-H3TRB | ||||||
62 mm | Half-Bridge | 1200 V | 400 A | 3.25 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | Industrial + HV-H3TRB | ||||||
62 mm | Half-Bridge | 1200 V | 300 A | 4 mΩ | Gen 3 MOS | 175 °C | 105 x 62 x 31 mm | Industrial + HV-H3TRB | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial | ||||||
62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial | ||||||
62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial | ||||||
62 mm | Half-Bridge | 1700 V | 225 A | 8 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | Industrial | ||||||
62 mm | Half-Bridge | 1200 V | 300 A | 4.2 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | Industrial | ||||||
62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | Industrial | ||||||
62 mm | Half-Bridge | 1200 V | 120 A | 13 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | Industrial | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Industrial | ||||||
FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Industrial |
参考设计
参考设计
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参考设计
Product SKU | Name | Buy Online | Type | Topology | Power | Discrete/Module | Package | Device SKU(s) | Designed By | View Product |
---|---|---|---|---|---|---|---|---|---|---|
AC to DC | Totem-Pole PFC | 3.6kW | Discrete | TOLL, TO-247-3 | Wolfspeed | |||||
AC to DC, DC to AC | Passive Rectifier and Three-Phase, 2-Level | 7.5kW | Module | FM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 11kW | Discrete | TO-247-4, TO-263-7 | Wolfspeed | |||||
AC to DC | Three-Phase, 2-Level | 22kW | Discrete | TO-247-4 | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 25kW | Module | FM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 200kW | Module | XM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 250kW | Module | XM | Wolfspeed | |||||
DC to AC | Three-Phase, 2-Level | 300kW | Module | XM | Wolfspeed | |||||
DC to AC | Dual Three-Phase, 2-Level | 600kW | Module | XM | Wolfspeed |
知识中心
The design and geometry of power modules enable EMI modeling which empowers designers to predict and understand their system’s EMI behavior early in the design process.
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使用 SpeedFit™ 设计仿真器,对于采用碳化硅的工业电机驱动进行设计仿真
快速测试 Wolfspeed 的碳化硅功率器件,设计更高效、更小型、更安静的工业单相和三相电机驱动系统,涵盖工业低电压电机驱动、伺服驱动、热泵与空调的压缩机等。SpeedFit 提供了散热器参数的具体选择,使得您的仿真更加贴近于实际的条件和运行。
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