Specifications
- Gate resistors onboard
- Heatsink preassembled on board
- BNC connector for lower VDS measurement
- MMCX connectors for VGS and IDS measurement
- Miller clamp transistor supported
- High-Bandwidth current sensor
SpeedVal™ Kit Modular Evaluation Platform Power Daughter Cards – TO-263-7
TO-263-7 package
TO-263-7 Package Board
Silicon Carbide MOSFETs in a TO-263-7 package support high power designs and simplify assembly with SMT processes. The SpeedVal Kit TO-263-7 power daughter cards feature two MOSFETs arranged in a half-bridge configuration. The unique card edge interface provides low inductance and simplifies the process of swapping out components, enabling high-quality measurements and quick comparisons between different devices. Power Daughter Cards are optimized for making accurate high-bandwidth current and voltage measurements.
An on-board current shunt can be optimized for highly accurate dynamic switching tests, or high-power thermal testing with the evaluation board. The coaxial MMCX connectors for VGS and IDS and BNC connectors for VDS provide noise-free measurements to improve accuracy and simplify gate drive optimization.
The power daughter cards include a pre-assembled heatsink which aligns with a fan on the motherboard to enable high-power testing.
Featured Resources
Technical Support
Featured Documents
Products
SpeedVal™ Kit Modular Evaluation Platform Power Daughter Cards – TO-263-7
No filters selected, showing all 8 products
SpeedVal™ Kit Modular Evaluation Platform Power Daughter Cards – TO-263-7 - Filter By
SpeedVal™ Kit Modular Evaluation Platform Power Daughter Cards – TO-263-7
Product SKU | Buy Online | Request Sample | User Guide | Design Files | Upper Devices | Lower Devices | Blocking Voltage | RDS(ON) at 25°C | Package | View Product |
|---|---|---|---|---|---|---|---|---|---|---|
650 V | 25 mΩ | TO-263-7 | ||||||||
650 V | 45 mΩ | TO-263-7 | ||||||||
650 V | 60 mΩ | TO-263-7 | ||||||||
900 V | 65 mΩ | TO-263-7 | ||||||||
1200 V | 32 mΩ | TO-263-7 | ||||||||
1200 V | 40 mΩ | TO-263-7 | ||||||||
1200 V | 75 mΩ | TO-263-7 | ||||||||
1200 V | 160 mΩ | TO-263-7 |
Product Details
What's Included
- Power Daughter Card
- Complete design files
Purchase Separately
- Motherboards (required)
- All Power Daughter Cards (required)
- Gate Drive Card (required)
- Control Card (optional)
- Accessories (optional)
SpeedVal Kit Videos
Unboxing Wolfspeed’s SpeedVal Kit
What’s in the box? Join Wolfspeed Global Distribution Technical Manager Nick Powers as he unboxes the SpeedVal Kit Modular Evaluation Platform and highlights the advantages of using this flexible set of power building blocks for in-circuit evaluation of power system performance.
Documents, Tools & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
Knowledge Center
The Silicon Carbide Landscape and Advantage
Wolfspeed’s silicon carbide expert Guy Moxey kicks of Wolfspeed’s 2024 Designer’s Guide by exploring the proliferation of silicon carbide across applications, including electric vehicles, industrial motor drives and e-mobility, and ways Wolfspeed is meeting growing global demand.
Register Now Webinars
Silicon Carbide Device Modeling
Learn how designers new to silicon carbide can leverage Wolfspeed’s design support tools to generate models that solve system design challenges. During this session learn which Wolfspeed design tools are best suited to your application.
Register Now Webinars
Care Abouts and Proper Selection of Gate Drive Solutions for Silicon Carbide
Explore some of silicon carbide’s unique gate drive requirements, potential Wolfspeed solutions, and trade-offs to each.
Register Now Webinars