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SiC MOSFET裸晶片

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產品SKU	阻斷電壓	R_DS(ON) 在 25°C	額定電流	柵極總電荷	輸出電容	反向恢復電荷 (Qrr)	反向恢復時間 (Trr)	最大結溫	世代
CPM3-0650-0015A	650 V	15 mΩ	120 A	190 nC	290 pF	510 nC	22 ns	175 °C	Gen 3
CPM3-0650-0045A	650 V	45 mΩ	49 A	63 nC	100 pF	247 nC	13 ns	175 °C	Gen 3
CPM3-0650-0060A	650 V	60 mΩ	37 A	46 nC	80 pF	151 nC	11 ns	175 °C	Gen 3
EPM3-0750-0010D	750 V	10 mΩ	178 A	267 nC	340 pF	737 nC	25 ns	175 °C	Gen 3+
CPM3-0900-0010A	900 V	10 mΩ	194 A	210 nC	360 pF	1300 nC	36 ns	175 °C	Gen 3
CPM3-0900-0030A	900 V	30 mΩ	66 A	87 nC	137 pF	545 nC	62 ns	175 °C	Gen 3
CPM3-0900-0065A	900 V	65 mΩ	32 A	33 nC	70 pF	220 nC	22 ns	175 °C	Gen 3
EPM3-1200-R013D	1200 V	13 mΩ	160 A	265 nC	226 pF	1259 nC	34 ns	175 °C	Gen 3+
CPM3-1200-0013A	1200 V	13 mΩ	149 A	260 nC	284 pF	1800 nC	43 ns	175 °C	Gen 3
EPM4-0120-0260JS0A	1200 V	13.8 mΩ	159 A	251 nC	212 pF	1379 nC	50 ns	175 °C	Gen 4
EPM3-1200-0014D1	1200 V	14 mΩ	149 A	255 nC	200 pF	1068 nC	31 ns	175 °C	Gen 3+
EPM3-1200-R015D	1200 V	15 mΩ	148 A	238 nC	200 pF	1388 nC	34 ns	175 °C	Gen 3+
CPM3-1200-0016A	1200 V	16 mΩ	112 A	227 nC	230 pF	1238 nC	30 ns	175 °C	Gen 3
EPM3-1200-0017D1-R01	1200 V	17 mΩ	134 A	207 nC	221 pF	1242 nC	53 ns	175 °C	Gen 3
EPM3-1200-0017D-R01	1200 V	17 mΩ	134 A	200 nC	220 pF	1100 nC	52 ns	175 °C	Gen 3
CPM3-1200-0021A	1200 V	21 mΩ	100 A	162 nC	180 pF	928 nC	34 ns	175 °C	Gen 3
CPM4-0120-0149JS0A	1200 V	26 mΩ	90 A	136 nC	110 pF	590 nC	56 ns	175 °C	Gen 4
CPM3-1200-0032A	1200 V	32 mΩ	63 A	118 nC	130 pF	478 nC	27 ns	175 °C	Gen 3
CPM4-0120-0104JS0A	1200 V	42 mΩ	55 A	93 nC	85 pF	496 nC	24 ns	175 °C	Gen 4
CPM3-1200-0075A	1200 V	75 mΩ	30 A	54 nC	58 pF	109 nC	25 ns	175 °C	Gen 3
CPM3-1700-R020E	1700 V	17.5 mΩ	120 A	249 nC	188 pF	2557 nC	43 ns	175 °C	Gen 3
EPM3-1700-0900A 新的	1700 V	900 mΩ	3.9 A	10 nC	8 pF	72 nC	40 ns	175 °C	Gen 3
CPM4-0230-0255ES0A 新的	2300 V	30 mΩ	83 A	147 nC	102 pF	256 nC	16 ns	175 °C	Gen 4
CPM3-3300-R050A	3300 V	53 mΩ	52 A	255 nC	140 pF	2.5 nC	124 ns	175 °C	Gen 3

章節結束

產品系列

650 V Bare Die SiC MOSFETs – Gen 3

750 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

900 V Bare Die SiC MOSFETs – Gen 3

1200 V Bare Die SiC MOSFETs – Gen 2

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應用筆記

銷售條款

9 Documents Available

Document Type	Document Name	Last Updated
應用筆記	PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages	02/2025
應用筆記	PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies	01/2025
應用筆記	PRD-07969: Sintering Considerations and the Die Top System	04/2024
應用筆記	PRD-08296: SiC MOSFET Short Circuit Events	11/2023
應用筆記	PRD-06379: Environmental Considerations for Power Electronics Systems	08/2023
應用筆記	PRD-06933: Capacitance Ratio and Parasitic Turn-on	01/2023
應用筆記	PRD-05653: Recommended Solder Profiles for Power Products	09/2022
應用筆記	PRD-05641: Designing with Silicon Carbide in Energy Storage Applications	02/2022
銷售條款	Wolfspeed, Inc. Sales Terms and Conditions	04/2025