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GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
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 Webinars
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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 Technical Articles
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GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
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 Technical Articles
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Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
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 Technical Articles
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GaN on SiC

Top Design Considerations for X-Band GaN Power Amplifiers

In this webinar, Dr. Robert Smith of PRFI Ltd. will discuss PA design considerations such as MMIC process selection, transistor sizing and biasing. He will also talk about the power combining of multiple transistors, matching considerations, and load-pull simulations.
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 Webinars
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GaN on SiC

GaN Solutions: Small Packages for Big Radar Challenges

AESA systems use active arrays, each with hundreds or even thousands of antennas. In many cases, the system is evaluated on the basis of size, weight, power, and cost (SWaP-C). The technology enabling the latest AESA radar systems must therefore offer significant benefits in terms of SWaP-C improvements.
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 Technical Articles
GaN on SiC HEMTs Drive Temps Down & Reliability Up
Aerospace

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles
GaN HEMT’s are ideal for troposcatter comm systems
Aerospace

Primer on BLOS Troposcatter Communications

The latest troposcatter communication system requirements place substantial challenges on RF designers and suppliers, with simultaneous requisites for low weight, ruggedness, reliability, compact size, high bandwidth, excellent electrical performance, and efficiency. Fortunately, Wolfspeed has an innovative line of gallium nitride (GaN) high-electron-mobility transistor (HEMT) power amplifier (PA) solutions.
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 Technical Articles
GaN HEMTs used in high power RF amplifiers
Aerospace

Benefits of GaN Transistors

GaN on SiC transistors offer numerous benefits over the more traditional technologies. These include a higher power density, higher breakdown voltage, higher thermal conductivity, and reduced power requirements. These benefits can lead to better efficiency (even at higher frequencies), a smaller form factor, lower overall system class, increased reliability, and best-in-class performance.
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