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GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
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 Technical Articles
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Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
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 Technical Articles
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GaN on SiC

Top Design Considerations for X-Band GaN Power Amplifiers

In this webinar, Dr. Robert Smith of PRFI Ltd. will discuss PA design considerations such as MMIC process selection, transistor sizing and biasing. He will also talk about the power combining of multiple transistors, matching considerations, and load-pull simulations.
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 Webinars
GaN RF power device designs and fabrication
GaN Foundry

Webinar: New G28V5 Process Provides Ka-Band GaN MMIC Capability

RF designs are continuing to require higher power and efficiency as well as wider bandwidths. This webinar will discuss how designers can take advantage of the Wolfspeed Foundry to quickly turn RF power designs into a reliable reality from initial development to recurring, high-volume production.
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 Webinars
GaN RF HEMT and MMIC Foundry Services | Wolfspeed
GaN Foundry

GaN RF HEMT and MMIC Foundry Services

Consumer demands are pushing the limits of what is possible with the modern-day semiconductor — which is why Wolfspeed, a Cree company, is focused on creating solutions that will power the technology of the future.
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GaN on SiC HEMT MMIC Foundry Service Partner
GaN Foundry

Who Needs a GaN on SiC Foundry?

As semiconductor materials go, wide bandgap technologies are not only enabling new growth in application markets but pushing through the inertia of entrenched technologies. RF gallium nitride (GaN), particularly when implemented as GaN on silicon carbide (SiC) substrate, stands out as being the best suited for high-power applications.
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