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Blocking Voltage 1000 V
Current Rating at 25°C 36 A
RDS(ON) at 25°C 65 mΩ
Package Bare Die
Gate charge total 35 nC
Reverse-Recovery Charge (Qrr) 310 nC
Output Capacitance 60 pF
Reverse-Recover Time (Trr) 14 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM3-1000-0065B

Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 1000V blocking voltage across the entire operating temperature range, thereby greatly reducing derating requirements. C3M MOSFET die can be configured in parallel to achieve higher current handling capability or can be connected in series to achieve higher blocking capability. Unlike silicon MOSFETs, Wolfspeed C3M SiC MOSFETs include a fast intrinsic diode with low reverse recovery (Qrr) – eliminating the need for external anti-parallel diodes. Unlike silicon IGBTs, they include avalanche capability and enable operation at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall size, weight, and cost of the system.  

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See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.


• Minimum of 1kV Vbr across entire operating temperature range (Reduce or eliminate derating)
• High-speed switching with low output capacitance
• High blocking voltage with low RDS(on)
• Avalanche ruggedness
• Fast intrinsic diode with low reverse recovery (Qrr)
• Easy to parallel and simple to drive

Note: CPM3-1000-0065B is NOT recommended for new designs.
The recommended equivalent is: CPM3-1200-0075A or CPM3-1200-0032A



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