Design Demo of Discrete MOSFET Paralleling

CRD-33DD12N-K

Note Coming Soon.

MOSFET parallelling is needed for high current and high power applications. Parallel operation of SiC MOSFETs offers lower cost, more flexible design and multiple sources. However, there are challenges facing the designers – unbalanced current sharing due to parametric variance such as turn-on threshold voltage and asymmetrical PCB layout, leading to thermal unbalance issue and potential early failure of parts. Therefore, factors affecting current sharing among discrete MOSFETs in parallel need to be studied and countermeasures are desired.

The Design Accomplishes:

PCB layout which possesses balanced parasitic inductances for three MOSFETs in parallel
Good current sharing among the three MOSFETs in parallel has been achieved despite significant difference among turn-on threshold voltages

Specifications:

2-level, three TO-247-4L SiC MOSFETs in parallel, BUCK-BOOST in open-loop operation
Power devices: C3M0040120K
Input voltage: 650 VDC – 750 VDC
Output current: 85 ARMS (Max.)
Power: 33 kW (Max.)
Peak efficiency: > 99%
Frequency: 40 kHz
Temperature: -40 to 85 °C (Heatsink)

Wolfspeed Power Reference Design CRD-33DD12N-K Design Demo of Discrete MOSFET Paralleling

Wolfspeed Power Reference Design CRD-33DD12N-K Design Demo of Discrete MOSFET Paralleling

Applications

Fast charger
Solar / Energy storage
Relevant high current / high power applications

Support & Resources

Initial test results & design files available now
Hardware target availability Q3 2025

Product Compatibility

C3M00XX120K

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Block Diagram
Technical & Sales Documents
Tools & Support

Circuit block diagram of Wolfspeed Reference Design CRD-33DD12N-K

Circuit block diagram of Wolfspeed Reference Design CRD-33DD12N-K

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0040120K

1200 V, 40 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

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