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SiC MOSFETs

The Wolfspeed SpeedFit 2.0 Design Simulator: Accelerating the SiC design process

Wolfspeed’s SpeedFit 2.0 Design Simulator helps you select the right Wolfspeed SiC product for your design as well as run simulations to help you easily predict and minimize conduction and switching losses, quickly compare different device and thermal configurations, and generate circuit diagrams and a summary report to help you bring the whole thing together.
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Automotive

Market dynamics and supply chains for future powertrains

Join us for the Powertrain Innovation Webinar Series presented by McLaren Applied and Arrow. This free to attend event is aimed at those interested in the future of electrification providing attendees with an update on the latest electrification capabilities, next generation inverters and advances in electrified powertrains.
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Silicon Carbide

A Designer’s Guide to Silicon Carbide: Quality, qualification & long-term reliability

Now that silicon carbide has been established as a transformative technology, many power designers are focusing on SiC device level qualification, reliability and consistency of supply. Wolfspeed is leading the pack with comprehensive proven product reliability across its entire vertical supply chain, ensuring that the unprecedented market demand for SiC can be realized throughout the next decade and beyond.
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Silicon Carbide

Jumpstarting a SiC-based design with the SpeedFit 2.0 Design Simulator

Understanding the in-circuit behavior of silicon carbide (SiC) MOSFETs and Schottky diodes in power supplies is a critical component in the design process. Visualizing the performance of these SiC components can help a designer more readily leverage this technology.
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Silicon Carbide

Wolfspeed on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular silicon carbide based power reference designs.
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Schottky Diodes

BaSiCs of SiC Series: The Fundamentals of SiC Schottky Diodes

In the last blog we looked at the durability of SiC. In this blog, we will take a look at the properties and performance of SiC Schottky diodes, including a review of what makes Schottky diodes different and how they work.
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 BaSiCs of Silicon Carbide
SiC Schottky Diodes Design and Characteristics
Schottky Diodes

Design and Operating Characteristics of Schottky Diodes

The design of Schottky diodes has evolved alongside this demand in order to meet this challenge. The current model of SiC Schottky diodes features the most compact structure with the highest resistance to high voltages under reverse bias.
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 BaSiCs of Silicon Carbide
1700V SiC Schottky Diode
Schottky Diodes

1700V SiC Schottky Diode

Wolfspeed created the world’s first GaN HEMT in SiC in 1998. Wolfspeed’s SiC technology continues to offer the most advanced versions of wide bandgap semiconductor devices that support outstanding efficiency in real-world application. Most recently, the Wolfspeed engineers have made considerable developments in their advanced Schottky diode designs with the 1700V SiC Schottky diode.
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 BaSiCs of Silicon Carbide
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Schottky Diodes

The Evolution of the SiC Schottky Diode

As the largest vertically integrated producer of SiC and GaN on SiC, Wolfspeed is capable of creating semiconductor package designs that are optimized for SiC. Our SiC MOSFETs and SiC Schottky diodes are just two of the many packaged devices that benefit from Wolfspeed’s end-to-end expertise.
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